Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-11-02
2011-12-27
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S094000, C257S103000, C257SE33034
Reexamination Certificate
active
08084763
ABSTRACT:
A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
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Chen Zhen
Chung Roy B.
DenBaars Steven P.
Nakamura Shuji
Speck James S.
Gates & Cooper LLP
Ho Tu-Tu
The Regents of the University of California
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