Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1995-02-15
1997-05-20
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257431, 257459, 257464, 2503384, H01L 3100
Patent
active
056314892
ABSTRACT:
An optoelectronic device based on a conduction constriction through which charge carriers pass ballistically. The constriction has a cross-sectional area of 2 square microns or less and a thickness D and is made of doped semiconductor material with a carrier mobility .mu.. The thickness D is selected to be near to a characteristic path length D.sub.mes defined by D.sup.2.sub.mes =(h/2e)*.mu. where h is Planck's constant and e the elementary charge. The device can be used as a heterodyne radiation detector for detecting radiation in the frequency range between 3 GHz and 3 THz and is capable of detecting signals with a power of less than 10.sup.-14 watts in room temperature operation. The device can also be operated as the front end of a spectrometer. Other applications of the device include use as a high frequency AC current source or oscillator for microelectronics, for instance in the 100 to 500 GHz range.
REFERENCES:
patent: 5332918 (1994-07-01), Smith et al.
H.P. Roser et al., "Nanostructure GaAs Schottky Diodes For Far-Infrared heterodyne Receivers", Infrared Phys. Technol. vol. 35, No. 2/3, pp. 451-462, 1994 no month.
H.P. Roeser et al., "Current-frequency Characteristics of Submicrometer GaAs Schottky Barrier Diodes With Femtofarad Capacitance", J. Appl. Phys. 72(7), 1 Oct. 1992, pp. 3194-3197.
Jackson, Jr. Jerome
Kelley Nathan K.
Max-Planck-Gesellschaft Zur.
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