Optoelectronic component having a plurality of current...

Details Optoelectronic component having a plurality of current... Optoelectronic component having a plurality of current...

2007-06-05

2007-06-05

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S081000, C257S222000, C257S414000, C257S431000, C438S022000, C438S029000, C438S048000

Reexamination Certificate

active

11120514

ABSTRACT:
An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).

REFERENCES:
patent: 2003/0122144 (2003-07-01), Uemura et al.
patent: 2003/0183824 (2003-10-01), Doi et al.
patent: 2004/0222434 (2004-11-01), Uemura et al.
patent: 2004/0262620 (2004-12-01), Albrecht et al.
patent: 199 21 987 (1999-11-01), None
patent: 0 224 614 (1987-06-01), None
patent: 0 551 001 (1993-07-01), None

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