Optoelectronic component having a modulation-doped layer structu

Details Optoelectronic component having a modulation-doped layer structu Optoelectronic component having a modulation-doped layer structu

1997-05-21

1999-03-23

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 18, 257 21, 257 22, 257184, H01L 2906, H01L 310328, H01L 310336

Patent

active

058863613

ABSTRACT:
A valence band quantum-well structure with a modulation doping for an optical-component implemented in Si technology. With this component, a high quantum efficiency and detection efficiency are accomplished. By way of spatial separation of the doped zone from the almost undoped SiGe quantum well, the Coulomb scattering and the recombination probability of the charge carriers drifting in the externally applied electrical field is greatly reduced at the doping material cores.

REFERENCES:
patent: 4772924 (1988-09-01), Bean et al.
patent: 4843439 (1989-06-01), Cheng
patent: 5313073 (1994-05-01), Kuroda et al.
patent: 5646421 (1997-07-01), Liu
K.W. Gossen et al.: "Performance aspects of a quantum-well detector". In: J. Appl. Phys. 63, (10), May 15, 1988, pp. 5149-5153.
L.K. Orov et al.: "Photovoltaic effect in structures containing Ge-Ge.sub.1-x Si.sub.x superlattices". In: Sov. Phys. Semicond. 22 (11), Nov. 1988, pp. 1262-1266.

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