Optoelectronic component and method of fabricating same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C438S930000

Reexamination Certificate

active

07459727

ABSTRACT:
The invention concerns an optoelectronic component comprising a layer stack that includes at least two active zones and a carrier that is applied to the layer stack. The invention further concerns a method of fabricating such an optoelectronic component.

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Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes”Appl. Phys. Lett., vol. 63, No. 16, pp. 2174-2176 (Oct. 18, 1993).

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