Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-05-31
2008-09-30
Chu, Chris C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33061, C257S095000, C257S432000, C257S678000, C362S232000, C362S240000, C313S486000
Reexamination Certificate
active
07429758
ABSTRACT:
An optoelectronic component having a basic housing or frame (12) and at least one semiconductor chip (20), specifically a radiation-emitting or -receiving semiconductor chip, in a cavity (18) of the basic housing. In order to increase the efficiency of the optoelectronic component (10), reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound (28) filled at least partly into the cavity (18) is provided, the material and the quantity of the filling compound (28) being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas (30) of the filling compound serve as reflector.
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Computer generated English Translation of JP 2002-033517 from the JPO Website.
Bogner Georg
Braune Bert
Kromotis Patrick
Ruhnau Marcus
Chu Chris C.
Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductor GmbH
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