Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-07-12
2005-07-12
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S014000, C257S021000, C257S084000
Reexamination Certificate
active
06917055
ABSTRACT:
An optoelectronic component has at least one light source which is monolithically integrated in a semiconductor material, in particular having a laser diode. At least one photodetector for measuring the light output power is coupled to the light source via an active layer of the light source. At least one active layer or a modulator layer has a multiple quantum well structure formed with at least two quantum well types and/or a quantum dot structure. In the production method the active layer for the light source is first grown on a substrate and a photodetector structure is then grown on the active layer for the light source. The novel optoelectronic component is very compact and can be regulated efficiently.
REFERENCES:
patent: 4653058 (1987-03-01), Akiba et al.
patent: 5105433 (1992-04-01), Eisele et al.
patent: 5283447 (1994-02-01), Olbright et al.
patent: 5361273 (1994-11-01), Kosaka
patent: 5485014 (1996-01-01), Jain et al.
patent: 5659646 (1997-08-01), Vinchant et al.
patent: 5714765 (1998-02-01), Noetzel et al.
patent: 5917636 (1999-06-01), Wake et al.
patent: 6001664 (1999-12-01), Swirhun et al.
patent: 6066859 (2000-05-01), Stegmueller
patent: 6253009 (2001-06-01), Lestra et al.
patent: 6711200 (2004-03-01), Scherer et al.
patent: 39 31 588 (1991-04-01), None
patent: 0 665 450 (1995-08-01), None
patent: 196 52 529 (1998-06-01), None
patent: 1 005 120 (2000-05-01), None
patent: 2 120 457 (1983-11-01), None
Y. Suzaki et al.: “Novel 1.3 μm MQW light-emission-and-detection diode with flat responsivity characteristics”,Electronics Letters, vol. 31, No. 16, Aug. 3, 1995, pp. 1388-1389.
U. Koren et al.: “ A 1.3 μm Wavelength Laser with an Integrated Output Power Monitor Using a Directional Coupler Optical Power Tap”,IEEE Photonics Technology Letters, vol. 8, No. 3, Mar. 1996, pp. 364-366.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
Wilson Allan R.
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