Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-07-13
2010-02-16
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S098000, C257S099000, C257S094000, C257SE33068, C257SE33067, C257SE33072, C257SE51021, C438S029000, C438S042000, C438S025000, C438S026000, C438S455000, C438S458000, C438S027000
Reexamination Certificate
active
07663150
ABSTRACT:
An optoelectronic chip having a semiconductor body (14), which contains a radiation-emitting region (2), and a partial region (3) in which the surface (13) of the semiconductor body (14) is curved convexly toward a carrier (10). The lateral extent (2r) of the radiation-emitting region (2) is less than the lateral extent (2R) of the partial region (3). A method for producing such a chip is also described.
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Streubel Klaus
Wirth Ralph
Cohen Pontani Lieberman & Pavane LLP
Lopez Fei Fei Yeung
Osram Opto Semiconductors GmbH
Tran Minh-Loan T
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