Optoelectric high frequency modulator integrated on silicon

Details Optoelectric high frequency modulator integrated on silicon Optoelectric high frequency modulator integrated on silicon

2005-03-29

2010-02-02

Doan, Jennifer (Department: 2874)

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

C385S001000, C385S002000, C385S003000, C385S129000, C385S130000

Reexamination Certificate

active

07657146

ABSTRACT:
An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by carrier desertion.

REFERENCES:
patent: WO/02069025 (2002-09-01), None
Article by Vonsovici et al.;Modulation Doped SiGe-Si MQW for Low-Voltage High-Speed Modulators at 1.3μm, IEEE Journal of Selected Topics in Quantum Electronics, IEEE Service Center, U.S., vol. 4, Nov. 1998, p. 1011-1019.

Affiliated with

Also associated with

Rating

Optoelectric high frequency modulator integrated on silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optoelectric high frequency modulator integrated on silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optoelectric high frequency modulator integrated on silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4198351