Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state
Patent
1997-02-27
1999-11-16
Speer, Timothy M.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
117 19, 117 35, C30B 100
Patent
active
059850221
ABSTRACT:
Optoelectric article includes a substrate made of an optoelectric single crystal and a film of a single crystal of lithium niobate formed on the substrate by a liquid phase epitaxial process, wherein a ratio of lithium
iobium of a composition of the film of the lithium niobate single crystal falls in a range of 48.6/51.4 to 49.5 to 50.5 or 50.5/49.5 to 52.3/47.7.
REFERENCES:
patent: 5209917 (1993-05-01), Ohno
patent: 5310448 (1994-05-01), Bordui
patent: 5643688 (1997-07-01), Fukuda
"Optical Waveguide of LiNbO3 Thin Film Grown by Liquid Phase Epitaxy", Applied Phys. Letters, vol. 26, No. 1, Jan. 1, 1975, by Miyazawa et al.
"Liquid Phase Epitaxial Growth of LiNbO3 Thin Film Using Li2O-B203 Flux System", Journ. of Crystal Growth 132 (1993), by Yamada et al.
Patent Abstracts of Japan, vol. 17, No. 475 (C-1103) [6104] , Aug. 30, 1993 .
Fukuda Tsuguo
Imaeda Minoru
Kawaguchi Tatsuo
NGK Insulators Ltd.
Speer Timothy M.
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