Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-08-02
2011-08-02
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S083000, C257S084000, C257S093000, C257SE33044, C438S022000, C438S024000
Reexamination Certificate
active
07989822
ABSTRACT:
This invention details how a low cost opto coupler can be made on Silicon On Insulator (SOI) using conventional integrated circuit processing methods. Specifically, metal and deposited insulating materials are use to realize a top reflector for directing light generated by a silicon PN junction diode to a silicon PN junction photo diode detector. The light generator or LED can be operated either in the avalanche mode or in the forward mode. Also, side reflectors are described as a means to contain the light to the LED-photo detector pair. Furthermore, a serpentine junction PN silicon LED is described for the avalanche mode of the silicon LED. For the forward mode, two LED structures are described in which hole and electrons combine in lightly doped regions away from heavily doped regions thereby increasing the LED conversion efficiency.
REFERENCES:
patent: 5438210 (1995-08-01), Worley
patent: 6103564 (2000-08-01), Masuda
patent: 6365951 (2002-04-01), Worley
patent: 6376851 (2002-04-01), Worley
patent: 6393183 (2002-05-01), Worley
patent: 6710376 (2004-03-01), Worley
patent: 6757381 (2004-06-01), Worley
patent: 6864509 (2005-03-01), Worley
patent: 6864555 (2005-03-01), Worley
patent: 6885016 (2005-04-01), Worley
patent: 2003/0042405 (2003-03-01), Worley
T. Hoang, P. LeMinh, J. Holleman, J. Schmitz, “Strong Efficiency Improvement of SOI-LEDs Through Carrier Confinement,” IEEE Electron Device Letters, vol. 28, No. 5, pp. 383-38.
G. Pan, R. Ostroumov, Y. Lian, K. Tu and K. Wang, “(1 13) Defect-Engineered Silicon Light-Emitting Diodes,” International Electron Devices Meeting, pp. 343-346, 2004.
N. Soboleva, et. al, “Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes,” Physica B 340-342, pp. 1031-1035, 2003.
Le Dung A.
Worley Eugene R.
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