Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-01-25
1996-10-01
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 18, 257 22, 257 21, 372 45, 372 46, 359248, H01L 2906, H01L 310328, H01L 310336
Patent
active
055613012
ABSTRACT:
An opto-semiconductor device is disclosed which is provided with a quantum well structure comprising a first and a second barrier layer and a well layer sandwiched by the barrier layers. The barrier layers are provided in at least part thereof with a strain layer enabled to generate an internal electric field by a piezoelectric effect. The barrier layers are adapted to sandwich the well layers.
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patent: 5313073 (1994-05-01), Kuroda et al.
Gershoni et al, "Strained-Layer Ga.sub.1-y In.sub.x As/InP Avalanche Photodetectors," Appl Phys. Lett. 53 (14), 3 Oct. 1988, pp. 1294-1296.
Osbourn et al, "A GaAs.sub.x P.sub.1-x /GaP Strained-Layer Superlattice," Appl. Phys. Lett. 41(2), 15 Jul. 1982, pp. 172-174.
Fujitsu Limited
Mintel William
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