Opto-electronic sensing apparatus and method

Details Opto-electronic sensing apparatus and method Opto-electronic sensing apparatus and method

1976-09-22

1980-01-22

Miller, Jr., Stanley D.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

250211J, 357 30, H01L 2714

Patent

active

041852931

ABSTRACT:
An opto-electronic sensor has an insulating substrate on which a plurality of x-lines of doped n (p) type conductivity semiconductor material are arranged. A light-permeable insulating layer covers the x-lines. A plurality of y-lines of electrically conductive material are then arranged over the insulating layer transversely to the x-lines. Sensor elements are formed at the crossover points of the x- and y-lines. A partial region of opposite conductivity type light sensitive material is arranged adjacent the x-line and beneath the y-line at the crossover point. This partial region forms a barrier-layer effect at a junction of the partial region with the doped semiconductor material of the x-lines.

REFERENCES:
patent: 3683193 (1972-08-01), Weimer
Jespers et al., "Three-Terminal Charge-Injection Device", IEEE J. of Solid-State Circuits, vol. SC-11, No. 1, Feb. 1976, pp. 133-139.

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