Opto-electronic memory element on the basis of organic...

Details Opto-electronic memory element on the basis of organic... Opto-electronic memory element on the basis of organic...

2007-09-04

2007-09-04

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C438S104000, C257S448000, C257SE21645

Reexamination Certificate

active

11024932

ABSTRACT:
A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin derivative, and wherein the second electrode is transparent and includes ZnO, which is doped with B, Al, Ga, or Mg.

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patent: 5475213 (1995-12-01), Fujii et al.
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 6888750 (2005-05-01), Walker et al.
patent: WO-2005053027 (2005-06-01), None

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