Opto-electronic integrated circuit

Details Opto-electronic integrated circuit Opto-electronic integrated circuit

1994-06-29

1996-02-06

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257462, 257464, H01L 2906, H01L 2978

Patent

active

054897980

ABSTRACT:
In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate, a pin-type photodiode is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface region of the semiconductor substrate, a heterojunction bipolar transistor is constituted on the basis of only a second transistor layer separated form the first transistor layer. Since a plurality of heterojunction bipolar transistors are normally integrated for one pin-type photodiode, the thickness of the heterojunction bipolar transistors larger in number than the pin-type photodiode is set regardless of the thickness of the pin-type photodiode. The thickness of a high-resistance layer in the pin-type photodiode is set with an increased degree of freedom. When the first surface region of the semiconductor substrate is the inner region of a recessed step portion, and the second surface region of the semiconductor substrate is the outer region of the recessed step portion, a difference in thickness between the heterojunction bipolar transistor and the pin-type photodiode is absorbed by the depth of the recessed step portion. For this reason, the pin-type photodiode and the heterojunction bipolar transistor are formed to have almost the same surface level.

REFERENCES:
patent: 4794440 (1988-12-01), Capasso et al.
patent: 5063426 (1991-11-01), Chandrasekhar et al.
Sasaki et al., "Monolithic Integration of HEMTs & HBTs . . . " IEDM, 1989, pp. 30.8.1-30.8.3.
Nobuhara et al., "Planar Integration Tech. . . . ", Optoelectronics vol. 2 #2, Dec. 1987, pp. 303-311.
Chandrasekhar et al., "Integrated InP/GaInAs . . . " Electronics Lttrs. vol. 24 #33, Nov. 1988, pp. 1443-1444.
Eugene John et al., "Speed And Sensitivity Limitations Of Optoelectronic Receivers Based On MSM Photodiode And Millimeter-Wave HBT's On InP Substrate", IEEE Photonics Technology Letters, vol. 4, No. 10, published Oct. 1992, pp. 1145-1148.
Hiroshi Yano et al., "An Ultra-High-Speed Optoelectronic Integrated Receiver For Fiber-Optic Communications", IEEE Transactions On Electron Devices, vol. 39, No. 10, published Oct. 1992, pp. 2254-2259.
"An InP/InGaAs p-i-n/NBT Monolitich Transimpedance Photoreceiver", by S. Chandrasekhar, et al., pp. 505-506, IEEE Photonics Technology Letters, vol. 2, No. 7 (Jul. 1990).

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