Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1994-05-02
1995-12-12
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257186, 257197, 257458, 257615, H01L 2701
Patent
active
054752566
ABSTRACT:
An opto-electronic integrated circuit is arranged to comprise a photodetector and a tunnel emitter bipolar transistor for first-stage amplification of a current generated in the photodetector, as formed on a substrate. The tunnel emitter bipolar transistor can be operated at high speed and has a high amplification factor, so that noise due to the base current can be reduced upon amplification of the current generated in the photodetector by light detection.
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Sasaki Goro
Sawada Sosaku
Yano Hiroshi
Prenty Mark V.
Sumitomo Electric Industries Ltd.
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