Opto-electronic devices based on bulk crystals of complex semico

Details Opto-electronic devices based on bulk crystals of complex semico Opto-electronic devices based on bulk crystals of complex semico

1979-09-07

1981-09-01

Edlow, Martin H.

357 15, 357 61, H01L 2714

Patent

active

042875277

ABSTRACT:
Opto-electronic devices such as photodetectors have been made based on bulk crystals of Ga.sub.x In.sub.1-x P.sub.y As.sub.1-y. These bulk crystals have high purity, e.g., less than 10.sup.16 carriers/cm.sup.3 and low defect densities, e.g., less than 10.sup.6 cm.sup.-2. The properties of these crystals lead to photodetectors with good quantum efficiencies.

REFERENCES:
patent: 4075651 (1978-02-01), James
patent: 4213138 (1980-07-01), Campbell et al.
Journ. of Appl. Phys., vol. 43, No. 8, Aug. 1972, pp. 3533-3537.
Journ. of Appl. Phys., vol. 44, No. 3, Mar. 1973, pp. 1333-1341.
Soviet Physics-Solid State, vol. 8, No. 4, Oct. 1966, pp. 1025-1026.

Affiliated with

Also associated with

Rating

Opto-electronic devices based on bulk crystals of complex semico does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Opto-electronic devices based on bulk crystals of complex semico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Opto-electronic devices based on bulk crystals of complex semico will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1678833