Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-05-21
2000-03-14
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257 94, 257 96, 257103, 257184, H01L 2906, H01L 3300
Patent
active
060376031
ABSTRACT:
An opto-electronic device, such as a light-emitting diode, comprises a transparent high lateral conductivity current spreading layer 31 overlying a conventional p-n junction active region 10. The current spreading layer 31 comprises a multiple quantum-well heterostructure having a plurality of thin layers 33 of a material having a band-gap narrower than the band-gap of the active region disposed between layers 32 of a material having a band-gap greater than or equal to the band-gap of the active region 10, the wide band-gap layers 32 being more highly doped than said narrow band-gap layers 33. Quantum confinement occurs in the narrow band-gap layers 33, so that it becomes transparent to light emitted from the active region 10. Furthermore, the layers 33 of narrow band-gap material become highly conductive owing to charge carriers which have transferred from the more highly doped wide band-gap material layers 32. The quantum-well heterostructure thus forms a transparent layer 31 which acts to spread current across the entire active region 10.
REFERENCES:
patent: 4660208 (1987-04-01), Johnston et al.
patent: 4716130 (1987-12-01), Johnston et al.
patent: 4775876 (1988-10-01), Moyer
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5115286 (1992-05-01), Camras et al.
patent: 5197077 (1993-03-01), Harding et al.
patent: 5359209 (1994-10-01), Huang
patent: 5466950 (1995-11-01), Sugawara et al.
"The Growth and Properties of High Performance AlGalnP Emitters Using a Lattice Mismatched GaP Window Layer," by R. M. Fletcher, C. P. Kuo, T. D. Osentowski, K. H. Huang, and M. G. Craford, Hewlett-Packard Optoelectronics Division, San Jose, California 95131, 1991.
"Optimization of Electroluminescent Efficiencies For Vapor-Grown GaAs.sub.1-X P.sub.X Diodes," by C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, RCA Laboratories, Princeton, New Jersey, 1969.
Epitaxial Products International Limited
Headley Tim
Tran Minh Loan
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