Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-10-18
2005-10-18
Chaudhari, Chandra (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S098000
Reexamination Certificate
active
06956244
ABSTRACT:
A method of integrating a chip with a topside active optical chip is described. The topside active optical chip has at least one optical laser device, having an active side including an optically active region, a laser cavity having a height, an optically inactive region, a bonding side opposite the active side, and a device thickness. The method involves bonding the optical chip to the electronic chip; applying a substrate to the active side, the substrate having a substrate thickness over the active region in the range of between a first amount and a second amount, and applying an anti-reflection without a special patterning or distinguishing between the at least one optical laser device and any other device. A hybrid electro-optical chip is also described as having an electronic chip; and a topside active optical chip. The hybrid electro-optical chip having been created by one of the methods herein. A module is also described. The module has an optical chip having at least one topside active laser and at least one photodetector, the at least one topside active laser having opposed mirrors defining an active region therebetween, an electronic chip bonded to the optical chip, and an anti-reflection coating on top of the substrate over the active region that was applied without distinguishing between the at least one topside active laser and the at least one photodetector as part of an anti-reflection coating process.
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Dudoff Greg
Trezza John
Chaudhari Chandra
Morgan & Finnegan , LLP
Vesperman William C.
Xanoptix Inc.
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