Opto-electronic device comprising an integrated laser and an...

Details Opto-electronic device comprising an integrated laser and an... Opto-electronic device comprising an integrated laser and an...

2008-09-30

2008-09-30

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S026000

Reexamination Certificate

active

11483184

ABSTRACT:
The field of the invention is that of integrated optical emission devices comprising a laser emission section and a section for modulating the optical power emitted by the laser, also known as ILM devices, the acronym standing for Integrated Laser Modulator. The invention is aimed at an ILM device comprising a laser section and a modulation section produced in a common structure of P.I.N type, the said structure successively comprising a substrate produced from n-doped semi-conductor material, a buried active zone, a p-doped vertical confinement layer and a semi-insulating lateral confinement layer, the part of the structure belonging to the laser section comprising a blocking layer produced from n-doped semi-conductor material disposed between the semi-insulating lateral confinement layer and the vertical confinement layer so as to reduce the leakage current existing between the said layers. The performance and the reliability of the final device is thus improved.

REFERENCES:
patent: 5901265 (1999-05-01), Tohyama et al.
patent: 2002/0105992 (2002-08-01), Arakaea et al.
patent: 2004/0013144 (2004-01-01), Kise et al.
Abstract EP 1233486 A Aug. 21, 2002 The Furukawa Electric Co.
Abstract EP 1372229A Dec. 17, 2003 Agilent Technologies Inc.
Aoki M et al : High Speed (10 Gbit/s) and Low Drive Voltage (1v Peak to Peak) Electroabsorption Modulator Integrated DFB Laser with Semi Insulating Buried Heterostructure Jun. 4, 1992.

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