Opto-electronic device

Details Opto-electronic device Opto-electronic device

1992-12-24

1994-12-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 15, 257 18, 257 64, 257461, 257432, 257451, 372 46, 372 48, H01L 2900, H01L 2714, H01L 2904, H01S 319

Patent

active

053731670

ABSTRACT:
An opto-electronic device with the physical and chemical characteristics at the junction thereof being well matched is disclosed. The opto-etectronic device includes a wafer, a first layer grown on the wafer, and a second layer grown on the first layer, wherein one of the first and second layers is an ordered structure while the other is a disordered structure.

REFERENCES:
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5305341 (1994-04-01), Nishikawa et al.

Affiliated with

Also associated with

Rating

Opto-electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Opto-electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Opto-electronic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1194886