Opto-electronic device

Details Opto-electronic device Opto-electronic device

1988-03-24

1988-12-27

Scott, Jr., Leon

Coherent light generators

Particular active media

Semiconductor

372 39, 372 44, H01S 319

Patent

active

047946067

ABSTRACT:
An opto-electronic device has an atomic layer superlattice semiconductor comprising different semiconductor materials periodically piled up, each material having an atomic layer thickness. The superlattice semiconductor has a bandgap different from an alloy semiconductor having equivalently the same composition as the former. In a semiconductor laser, as clad layers, the atomic layer superlattice semiconductor having equivalently the same composition as a Zn.sub.0.42 Cd.sub.0.58 S alloy semiconductor and a larger bandgap than the later is used, and a ZnSe.sub.0.94 S.sub.0.06 alloy semiconductor as an active layer is located between the cladding layers. The double-hetero structure semiconductor laser thus provided can perform the lasing at 470 nm at room temperature.

REFERENCES:
patent: 4122407 (1978-10-01), Van Vechten
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4644378 (1987-02-01), Williams
patent: 4671830 (1987-06-01), Burnham
patent: 4731338 (1988-03-01), Ralston et al.
Van der Ziel et al; "Absorption, Refractive Index, and Birefringence of AlAs-GaAs Monolayers", Jour. of Applied Phys. vol. 48, No. 7, Jul. 1977.

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