Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-12-27
2005-12-27
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S100000, C257S103000, C257S787000
Reexamination Certificate
active
06979842
ABSTRACT:
An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one radiation-transmissive electrical contact layer, which contains ZnO and is electrically conductively connected to an outer semiconductor layer. The contact layer is provided with watertight material in such a way that it is substantially protected against moisture.
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Gerthsen et al., “Physik” Springer Verlag Berlin, Heidelerg, New York, vol. 14, p. 482, 1982.
Albrecht Tony
Stein Wilhelm
Wirth Ralph
Flynn Nathan J.
Forde Remmon R.
Osram Opto Semiconductors GmbH
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