Patent
1983-09-06
1986-04-29
Sikes, William L.
357 15, H01L 2714, H01L 3100
Patent
active
045860696
ABSTRACT:
An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p.sup.+ -silicon with a doping density in the range of 5.times.10.sup.18 to 5.times.10.sup.19 (atoms per cm.sup.3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.
REFERENCES:
patent: 4040078 (1977-08-01), Eckton et al.
patent: 4496964 (1985-01-01), Tsubouchi et al.
patent: 4518981 (1985-05-01), Schlupp
patent: 4524374 (1985-06-01), Denda et al.
patent: 4544939 (1985-10-01), Kosonocky et al.
"Evaluation of a Schottky-Barrier IR-CCD Storing Mosaic Focal Plane" by B. apone et al. in SPIE, 156 Modern Utilization of Infrared Technology IV (1978).
Platinum Silicide Schottky-Barrier IR-CCD Image Sensors by M. Kimata et al. in the Japanese Journal of Applied Physics, vol. 21, p. 231, (1982).
Fundamentals of Semiconductor Devices, by E. S. Yang, McGraw-Hill Book Company, 1978, p. 133.
Koniger Max
Muller Gerhard
Fasse W. G.
Kane, Jr. D. H.
Messershmitt-Boelkow-Blohm Gesellschaft-mit-beschraenkter Haftun
Sikes William L.
Wise Robert E.
LandOfFree
Opto-electrical device made of silicon for detecting infrared li does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Opto-electrical device made of silicon for detecting infrared li, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Opto-electrical device made of silicon for detecting infrared li will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-144165