Optimum reduced pressure epitaxial growth process to prevent aut

Details Optimum reduced pressure epitaxial growth process to prevent aut Optimum reduced pressure epitaxial growth process to prevent aut

1983-10-19

1985-03-12

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148174, 156606, 156612, 156613, 156614, H01L 21205, H01L 2174, H01L 2176

Patent

active

045043302

ABSTRACT:
A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried subcollector) and boron (buried isolation) autodoping effects when pressures below one atmosphere are selected in accordance with the subcollector-to-isolation area ratio.

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IBM TDB, vol. 24, No. 3, Aug. 1981, "Eliminating Boron and Arsenic Autodoping Through Reduced Pressure", A. K. Gaind, A. A. Kozul, S. B. Kulkarni and E. Napoleon, 1731-1734.
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