Optimizing the operating characteristics of a CMOS integrated ci

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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327537, H03K 301

Patent

active

059173653

ABSTRACT:
According to the present invention, a system (10) for optimizing the operating characteristics of a CMOS integrated circuit (12) is provided. The integrated circuit has at least one n-channel transistor (18) and at least one p-channel transistor (16) formed on a common substrate. The n-channel transistor (18) and the p-channel transistor (16) each have a threshold voltage which can be adjusted by varying a voltage bias applied to the common substrate. A control means (14) couples to the common substrate. The control means (14) is operable to apply a varying voltage bias to the common substrate in order to reduce leakage current in the integrated circuit (12) in a standby mode and increase performance of the integrated circuit (12) in an active mode.

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Z. Chen et al. "Optimization of Quarter Micron MOSFETs for Low Voltage/Low Power Applications," IEDM 1995 (International Electron Devices Meeting), pp. 63-66.

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