Optics: measuring and testing – Dimension
Reexamination Certificate
2006-07-10
2009-02-24
Toatley, Jr., Gregory J (Department: 2877)
Optics: measuring and testing
Dimension
C356S637000
Reexamination Certificate
active
07495781
ABSTRACT:
An optical metrology model is created for a patterned structure formed on a semiconductor wafer. The optical metrology model has profile parameters, material refraction parameters, and metrology device parameters. Ranges of values for the parameters are defined. One or more measured diffraction signals of the patterned structure are obtained. The optical metrology model is optimized to obtain an optimized optical metrology model using the defined ranges of values defined and the one or more obtained measured diffraction signals of the patterned structure. For at least one parameter from amongst the material refraction parameters and the metrology device parameters, the at least one parameter is set to a fixed value within the range of values for the at least one parameter. At least one profile parameter of the patterned structure is determined using the optimized optical metrology model and the fixed value for the at least one parameter.
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Bao Junwei
Vuong Vi
Morrison & Foerster / LLP
Toatley Jr. Gregory J
Tokyo Electron Limited
Ton Tri T
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