Optimizing doping control in short channel MOS

Details Optimizing doping control in short channel MOS Optimizing doping control in short channel MOS

1992-05-07

1993-05-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437164, 437984, H01L 21266

Patent

active

052121062

ABSTRACT:
An improved process is provided for fabricating short channel complementary metal oxide semiconductor devices. The devices comprise source and drain regions separated by gate regions. The process comprises forming a shallow channel doping region (12') beneath the surface of a semiconductor (10) and forming source-drain regions (20') of opposite conductivity type (formerly known as lightly doped drain structures) on either side of the shallow doping region. A gate oxide (16) is formed on the surface of the semiconductor above the shallow channel doping region and a gate electrode (18) is formed to the gate oxide prior to the formation of the shallow channel doping region. The process permits spacing of the channel doping from the source-drain doping with self-alignment. Further, the doping of the source-drain regions is not constrained to the values of the lightly-doped structures of the prior art.

REFERENCES:
patent: 4080718 (1978-03-01), Richman
patent: 4356042 (1982-10-01), Gedaly et al.
patent: 4378627 (1983-04-01), Jambotkar
patent: 4499652 (1985-02-01), Shrivastava
patent: 4954459 (1990-09-01), Avanzino et al.
patent: 4977108 (1990-12-01), Haskell
patent: 5073512 (1991-12-01), Yoshino
patent: 5116778 (1992-05-01), Haskell et al.
Al F. Tasch et al, "Limitations of LDD Types of Structures in Deep-Submicrometer MOS Technology", in IEEE, vol. 11, No. 11, pp. 517-519 (Nov. 1990).
Ryuichi Izawa et al, "Impact of the Gate-Drain Overlapped Device (GOLD) for Deep Submicrometer VLSI", in IEEE, vol. 35, No. 12, pp. 2088-2093 (Dec. 1988).
James R. Pfiester et al, "An ITLDD CMOS Process with Self-Aligned Revere-Sequence LDD/Channel Implantation", in IEEE, vol. 38, No. 11, pp. 2460-2464 (Nov. 1990).

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