Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-01-31
1998-07-21
Dang, Trung
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438691, 438695, 438787, 438666, H01L 21302
Patent
active
057834881
ABSTRACT:
A method of forming sharp oxide peaks on the surface of a semiconductor wafer for the purpose of conditioning polishing pads used during a Chemical Mechanical Polishing process is disclosed. In order to create oxide peaks on the surface of a wafer, additional elements are added to a trace layer of the wafer. An oxide layer is deposited over the additional elements using an Electron Cyclotron Resonance Chemical Vapor Deposition process, which includes a sputtering step, in order to create sharp peaks in the oxide layer over the additional lines. In some embodiments, the additional elements may be formed from a multiplicity of rectangular blocks over which pyramid-like oxide peaks are created. In others, they may be formed from a multiplicity of rectangular blocks connected by narrow lines over which pyramid-like oxide peaks and knife-edged peaks, respectively, are created.
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Bothra Subhas
Weling Milind G.
Dang Trung
VLSI Technology Inc.
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