Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-07-22
2008-07-22
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S057000, C438S059000, C438S073000, C438S075000, C438S299000, C438S301000, C438S302000, C438S303000, C438S305000, C438S306000, C438S307000
Reexamination Certificate
active
07402451
ABSTRACT:
An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e, one-sided) active area extension region on one side of the transistor gate opposite the photoconversion device, while other transistors can have normal symmetrical (i.e, two-sided) active area extension regions (e.g., lightly doped drains) with resulting high performance and short gate lengths. The asymmetrical active area extension region of the transistor associated with the photodiode can serve to reduce dark current at the photoconversion device. The punch-through problem normally cured by a lightly doped drain is fixed at the transistor associated with the photoconversion device by adding a Vtadjustment implant and/or increasing its gate length.
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Au Bac H
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Smith Zandra
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