Optimized model and parameter selection for optical metrology

Optics: measuring and testing – Dimension

Reexamination Certificate

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C250S559220, C702S155000, C438S016000

Reexamination Certificate

active

07092110

ABSTRACT:
A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.

REFERENCES:
patent: 5326659 (1994-07-01), Liu et al.
patent: 5719796 (1998-02-01), Chen
patent: 5805290 (1998-09-01), Ausschnitt et al.
patent: 5963329 (1999-10-01), Conrad et al.
patent: 6130750 (2000-10-01), Ausschnitt et al.
patent: 6317211 (2001-11-01), Ausschnitt et al.
patent: 6334209 (2001-12-01), Hashimoto et al.
patent: 6470230 (2002-10-01), Toprac et al.
patent: 6532428 (2003-03-01), Toprac
patent: 6609086 (2003-08-01), Bao et al.
patent: 6622059 (2003-09-01), Toprac et al.
patent: 6704661 (2004-03-01), Opsal et al.
patent: 6748104 (2004-06-01), Bachelder et al.
patent: 6778911 (2004-08-01), Opsal et al.
patent: 6867866 (2005-03-01), Chang et al.
International Search Report mailed Mar. 17, 2004, for PCT patent application No. PCT/US03/23281 filed Jul. 25, 2003, 4 pages.
International Search Report mailed Feb. 18, 2005, for PCT patent application No. PCT/US2004/009453, filed Mar. 25, 2004, 4 pages.

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