Optimized doped and band gap adjusted photoresponsive amorphous

Details Optimized doped and band gap adjusted photoresponsive amorphous Optimized doped and band gap adjusted photoresponsive amorphous

1982-11-19

1985-01-08

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 427 39, 427 42, 427 51, 427 74, 357 2, 357 15, 357 30, 252 623R, 252 623E, 148 33, 148 335, 148 336, 430 85, 430 86, 420556, 420578, H01L 3106

Patent

active

044928106

ABSTRACT:
The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.
The addition of the adjusting element(s) to the alloy in layers or clusters adjusts the band gap to a selected optimum wavelength threshold for a particular device to increase the photoabsorption efficiency to enhance the device photoresponsiveness without deleteriously adding states in the gap which decrease the efficiency of the devices. The dopants also are added in thin enough layers or clusters between undoped layers or portions so that the optical and electronic properties of the resulting alloys are not degraded. The dopants and adjusting element(s) can be added in varying amounts, in discrete layers and/or clusters or in substantially constant amounts in the alloys and devices.

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