Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reissue Patent
2007-05-29
2007-05-29
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000
Reissue Patent
active
10020741
ABSTRACT:
An existing stacked capacitor fabrication process is modified to construct a three-dimensional stacked container capacitor. The present invention develops the container capacitor by etching an opening (or contact opening) into a low etch rate oxide. The contact opening is used as a form for deposited polysilicon that conforms to the sides of the opening walls. Within the thin poly lining of the oxide container a high etch-rate oxide, such as ozone TEOS, is deposited over the entire structure thereby bridging across the top of the oxide container. The high etch-rate oxide is planarized back to the thin poly and the resulting exposed poly is then removed to separate neighboring containers. The two oxides, having different etch rates, are then etched thereby leaving a free-standing poly container cell with 100% (or all) of the higher etch rate oxide removed and a pre-determined oxide surrounding the container still intact.
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Dennison Charles H.
Walker Michael A.
Micro)n Technology, Inc.
Nguyen Tuan H.
TraskBritt
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