Optimization of dry etching through the control of helium backsi

Details Optimization of dry etching through the control of helium backsi Optimization of dry etching through the control of helium backsi

1994-03-28

1997-04-29

Picardat, Kevin M.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 438723, 438721, H01L 21306

Patent

active

056245823

ABSTRACT:
In a dry non-isotropic etching process, backside cooling by helium controls the rate and uniformity of etching in a thermal silicon layer, the taper of profiles etched into silicon dioxide layers, and the dimension and uniformity of etched structures in a polycide or polysilicon layer, on the surface of a silicon wafer. Helium pressures from greater than 2 torr to more than 10 torr are satisfactorily utilized to produce these effects.

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patent: 4999320 (1991-03-01), Douglas
patent: 5096536 (1992-03-01), Cathey, Jr.
patent: 5164034 (1992-11-01), Arai et al.
patent: 5203558 (1993-04-01), Arai et al.
patent: 5342476 (1994-08-01), Cain
Wolf et al., "Silicon Processing for the VLSI Era," vol. 1, Lattice Press, Sunset Beach, California, 1986, pp. 384-393, 557-558.

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