Oscillators – Solid state active element oscillator – Significant distributed parameter resonator
Patent
1985-10-28
1986-11-25
Grimm, Siegfried H.
Oscillators
Solid state active element oscillator
Significant distributed parameter resonator
331 66, 307311, 357 3, H03B 912
Patent
active
046251820
ABSTRACT:
A high power solid state source of microwave and millimeter wave signals is provided by an optically triggered body of bulk semiconductor material selected from the Group III-V compounds including GaAs, Cr:GaAs, and Fe:InP and having a relatively long gap length which is in the order of 0.5 to 10.0 mm as well as having a resistivity which is greater than 1.times.10.sup.7 ohm-cm. The device is further dc biased to a field of between 15 kV/cm and 35 kV/cm. Under such conditions, a very low dc current flows without any oscillatory behavior; however, illumination of the semiconductor body with a fast rising optical pulse having a wavelength suitable for carrier generation causes electrons to be lifted to the conduction band which is accompanied by a rapid reduction of the resistivity. At the same time, the electric field across the gap length decreases to a value just above the oscillation threshold whereupon high power RF oscillations are generated whose frequency is a function of the recombination time of the excited carriers.
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Bovino Lawrence J.
Burke Terence
Weiner Maurice
Grimm Siegfried H.
Lane Anthony T.
Murray Jeremiah G.
Rehberg John T.
The United States of America as represented by the Secretary of
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