Optically transparent electrically conductive semiconductor wind

Details Optically transparent electrically conductive semiconductor wind Optically transparent electrically conductive semiconductor wind

1987-02-13

1988-10-18

Rutledge, L. Dewayne

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428632, 428633, 428639, 428641, 428642, 350 11, 350 16, 350164, B32B 1504, G02B 522

Patent

active

047787317

ABSTRACT:
A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed with a substrate of semi-conductor material which has a conduction modifying dopant diffused, grown or deposited on one surface thereof to a substantial depth so that a layer thereof exhibits reduced resistance to a value below 10 ohms/square. Anti-reflection dielectric layers are stacked on both outer surfaces thereof. The dielectric substrate may be of silicon, germanium or gallium arsenide depending on the transparency bandwidth of interest. The thickness of the substrate and the doping of the surface thereof is closely controlled to obtain both low electrical resistivity and high optical transmissivity.

REFERENCES:
patent: 4058638 (1977-11-01), Morton

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