Optically transparent, electrically conductive semiconductor win

Details Optically transparent, electrically conductive semiconductor win Optically transparent, electrically conductive semiconductor win

1998-08-19

2000-09-19

Nelms, David

Semiconductor device manufacturing: process

Making passive device

438 95, 438 96, 438 97, 438 98, 438102, 438106, 438455, 438459, H01L 2120

Patent

active

061211036

ABSTRACT:
A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a prefabricated semiconductor sheet bonded to a substrate material by optical contact. The sheet is a substantially uniformly doped wafer sufficiently thin that inherent absorption bands do not affect transmission. The sheet is contact bonded to the surface of an undoped transparent substrate without diffusion, growth or deposition on the surface. Windows having particular optical band pass characteristics are formed utilizing a zinc selenide substrate and a gallium arsenide sheet.

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Article in Semiconductor Wafer Bonding: Science, Technology, and Applications U. Gosele et al., Eds. Proceeding of the first International Symposium, vol. 92-7, Published by the Electrochemical Society, Inc., 1992 entitled: Van der Waals Bonded III-V Films for Optoelectronics, by Chan, Winston K., and Yablonovitch, pp. 123-131.

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