Radiation imagery chemistry: process – composition – or product th – Liquid crystal process – composition – or product
Patent
1989-02-24
1991-02-26
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Liquid crystal process, composition, or product
430325, 430326, 430296, 430330, 428 1, 350341, 350345, 350348, G03F 730
Patent
active
049961233
ABSTRACT:
An optically oriented photoresist material comprised of an organic polymer and an organic crystal material each having a different refractive index to form an optically oriented layer on a substrate wherein the optical waveguide is formed by an effect of the refractive index difference, and in said waveguide layer thus formed, the spread and scattering of lights are suppressed and very fine mask patterns of said photoresist can be produced.
REFERENCES:
patent: 3143423 (1964-08-01), Reynolds et al.
patent: 3952405 (1976-04-01), Vest
patent: 4366230 (1982-12-01), Ahne et al.
patent: 4526854 (1985-07-01), Watanabe et al.
patent: 4618514 (1986-10-01), McClelland et al.
patent: 4619500 (1986-10-01), Ahne et al.
patent: 4656116 (1989-04-01), Rohde et al.
patent: 4721367 (1988-01-01), Yoshinaga et al.
patent: 4772885 (1988-09-01), Uehara et al.
patent: 4822146 (1989-04-01), Yamanobe et al.
patent: 4857427 (1989-08-01), Itoh et al.
Hashimoto Kazuhiko
Kinoshita Satoshi
Nomura Noboru
Ueno Atsushi
Bowers Jr. Charles L.
Matsushita Electric - Industrial Co., Ltd.
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