Optically measuring the carrier concentration in a semiconductor

Details Optically measuring the carrier concentration in a semiconductor Optically measuring the carrier concentration in a semiconductor

1978-08-30

1980-02-12

Corbin, John K.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356128, G01N 2122

Patent

active

041881230

ABSTRACT:
A method of optically measuring the concentration of carriers in a doped region of a semiconductor wafer includes the step of selectively introducing conductivity modifiers into both the wafer and a test substrate simultaneously to form respectively the doped region in the wafer and a diffraction grating pattern in the substrate including periodically-spaced doped strips. The diffraction grating pattern is exposed to a beam of monochromatic light, and the intensity of one of the diffracted beams is measured, whereby the magnitude thereof is a measure of the carrier concentration in the doped region.

REFERENCES:
patent: 3988564 (1976-10-01), Garvin et al.
patent: 4039370 (1977-08-01), Kleinknecht
Rassudova et al., "Precision Diffraction Grating for Metrologic Purposes"; Optics and Spectroscopy, Aug. 1961, pp. 136-137.
Vasil'eva et al., "Measurement of the Selective Growth and Etching Rates of GaAs"; Inorganic Materials, vol. 12, Feb. 1976, pp. 162-164.

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