Optically measuring electric field intensities

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – Using radiant energy

Reexamination Certificate

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Reexamination Certificate

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07872468

ABSTRACT:
An apparatus includes an optical resonator and a passive optical device. The optical resonator has first and second optical reflectors and an optical cavity interposed between the reflectors. The optical resonator includes an electro-optically responsive material. One of the reflectors is a distributed Bragg reflector. A passive optical device is configured to direct light through the first optical reflector. The optical resonator is configured to return a portion of the light through the first reflector.

REFERENCES:
patent: 4972514 (1990-11-01), Linke
patent: 5963034 (1999-10-01), Mahapatra et al.
patent: 6677769 (2004-01-01), Whitaker et al.
patent: 6735234 (2004-05-01), Paschotta et al.
patent: 6798960 (2004-09-01), Hamada
patent: 6870624 (2005-03-01), Hobbs et al.
patent: 2001/0054681 (2001-12-01), Hamada
patent: 2003/0164947 (2003-09-01), Vaupel
patent: 1168008 (2002-01-01), None
X. Zheng, et al, “Electro-optic sampling system with a single-crystal 4-N, N-dimethylamino-4′-N′-methyl-4-stilbazolium tosylate sensor,” American Institute of Physics,Applied Physics Letters, vol. 82, No. 15, (Apr. 14, 2003), pp. 2383-2385.
J. L. Freeman, et al, “Electro-optic sampling of planar digital GaAs integrated circuits,” American Institute of Physics,Applied Physics Letters, vol. 47, No. 10, (Nov. 15, 1985), pp. 1083-1084.
Michael S. Heutmaker, et al, “Electro-optic sampling of high-speed silicon integrated circuits using a GaAs probe tip,” American Institute of Physics,Applied Physics Letters, vol. 59, No. 2, (Jul. 8, 1991), pp. 146-148.
D. R. Dykaar, et al, “Electro-optic sampling using an aluminum gallium arsenide probe,” American Institute of Physics,Applied Physics Letters, vol. 62, No. 15, (Apr. 12, 1993), pp. 1733-1735.
S. Loualiche, et al, “40 GHz Measurement on InP/Air Gap Line by Picosecond Electro-Optic Sampling,”Electronics Letters, vol. 26, No. 4, (Feb. 15, 1990), pp. 266-267.
K. Yang, et al, “Electro-optic field mapping system utilizing external gallium arsenide probes,” American Institute of Physics,Applied Physics Letters, vol. 77, No. 4, (Jul. 24, 2000), pp. 486-488.
Torsten Pfeifer, et al, “Optoelectronic On-Chip Characterization of Ultrafast Electric Devices: Measurement Techniques and Applications,”IEEE Journal of Selected Topics in Quantum Electronics, vol. 2, No. 3, (1996), pp. 586-604.
Wen-Kai Kuo, et al, “Two-dimensional electric-field vector measurement by a LiTaO3electro-optic probe tip,”Applied Optics, vol. 39, No. 27, (Sep. 20, 2000), pp. 4985-4993.
Wen-Kai Kuo, et al, “Three-dimensional electric-field vector measurement with an electro-optic sensing technique,” Optical Society of America,Optics Letters, vol. 24, No. 22, (Nov. 15, 1999), pp. 1546-1548.
Nabil Sahri, et al, “Packaged Photonic Probes for an On-Wafer Broad-Band Millimeter-Wave Network Analyzer,”IEEE Photonics Technology Letters, vol. 12, No. 9, (2000), pp. 1225-1227.
M. Shinagawa, et al, “Electro-Optic Sampling Using an External GaAs Probe Tip,”Electronics Letters, vol. 26, No. 17, (Aug. 16, 1990), pp. 1341-1343.
Gong-Ru Lin, “Optoelectronic delay-time controller for laser pulses,” Optical Society of America,Optics Letters, vol. 25, No. 11, (Jun. 1, 2000), pp. 799-801.
J. M. Zhang, et al, “Noise suppression in Ti:sapphire laser-based electro-optic sampling,” American Institute of Physics,Applied Physics Letters, vol. 75, No. 22, (Nov. 29, 1999), pp. 3446-3448.
J. M. Wiesenfeld, et al, “Electro-optic sampling measurements of high-speed InP integrated circuits,” American Institute of Physics,Applied Physics Letters, vol. 50, No. 19, (May 11, 1987), pp. 1310-1312.
T. Shibata, et al, “Effective Optical Transit Time in Direct Electro-Optic Sampling of GaAs Coplanar Integrated Circuits,”Electronics Letters, vol. 25, No. 12, (Jun. 8, 1989), pp. 771-773.
L. Duvillaret, et al, “Absolute voltage measurements on III-V integrated circuits by internal electro-optic sampling,”Electronics Letters, vol. 31, No. 1, (Jan. 5, 1995), pp. 23-24.
H-H Wu, et al, “Electro-optic sampling of optoelectronically phase-locked 10.0 GHz microwave signals using semiconductor laser diodes,”Electronics Letters, vol. 27, No. 18, (Aug. 29, 1991), pp. 1622-1623.
J. F. Lampin, et al, “Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect,” American Institute of Physics,Applied Physics Letters, vol. 78, No. 26, (Jun. 25, 2001), pp. 4103-4105.
Taiichi Otsuji, et al, A 105-GHz Bandwidth Optical-to-Electrical Conversion Stimulus Probe Head Employing a Unitraveling-Carrier Photodiode,IEEE Photonics Technology Letters, vol. 11, No. 8, (1999), pp. 1033-1035.
Gong-Ru Lin, et al, “A Novel Electro-Optic Sampling System with a Delay-Time-Tunable pulsed laser diode,”Microwave and Optical Technology Letters, vol. 28, No. 6, (Mar. 20, 2001), pp. 432-434.
Janis A. Valdmanis, et al, “Subpicosecond Electrooptic Sampling: Principles and Applications,”IEEE Journal of Quantum Electronics, vol. QE-22, No. 1, (1986), pp. 69-78.
Ralf Hofmann, et al, “Electro-Optic Sampling System for the Testing of High-Speed Integrated Circuits Using a Free Running Solid-State Laser,”Journal of Lightwave Technology, vol. 14, No. 8, (1996), pp. 1788-1793.
Thomas Y. Hsiang, et al, “Propagation characteristics of picosecond electrical transients on coplanar striplines,” American Institute of Physics,Applied Physics Letters, vol. 51, No. 19, (Nov. 9, 1987), pp. 1551-1553.
J. Allam, et al, “Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor,”Optical and Quantum Electronics, vol. 28, (1996), pp. 875-896.
Michael Y. Frankel, et al, “Experimental Characterization of External Electrooptic Probes,”IEEE Microwave and Guided Wave Letters, vol. 1, No. 3, (1991), pp. 60-62.
Antonello Cutolo, “Selected contactless optoelectronic measurements for electronic applications,” American Institute of Physics,Review of Scientific Instruments, vol. 69, No. 2, (Feb. 1998), pp. 337-360.
S. M. Chandani, et al, Fiber-Based Electro-Optic Sampling for In-Circuit Probing, University of British Columbia, Dept. of Electrical and Computer Engineering,Ultrafast Electronics&Fiber Optics Lab, Conference Presentation, (May 2002), slides 1-18.
Machine translation of Japanese Patent Application Publication JP 07027696 A (a similar machine translation of a portion of the same Japanese Patent Application was received from U.S. Patent and Trademark Office during prosecution of parent U.S. Appl. No. 10/983,864.) 62 pages, available online at JPO, publication date unknown, but applicant admits documents was publically available prior to 2004.
Patent Abstracts of Japan, Publication No. 07-027696, published Jan. 31, 1995, 1 page.

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