Optically isolated monolithic light emitting diode array

Details Optically isolated monolithic light emitting diode array Optically isolated monolithic light emitting diode array

1977-09-21

1979-09-04

Edlow, Martin H.

357 18, 357 16, 357 55, 357 90, H01L 3300

Patent

active

041670167

ABSTRACT:
Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded concentrated wafer and selectively removing portions of the opposite sides of the wafer adjacent to said p-n junctions in order to permit light of varying colors to escape and to provide optical isolation. Metallurgical pads are provided to each of the p-n junctions for solder reflow type connections.

REFERENCES:
patent: 3443166 (1969-05-01), Ing, Jr. et al.
patent: 3890170 (1975-06-01), Russ
patent: 3946417 (1976-03-01), Jacobus, Jr.
patent: 3947840 (1976-03-01), Craford et al.
patent: 4053914 (1977-10-01), Goodwin
Marinace, I.B.M. Tech. Discl. Bull.; vol. 11, No. 4, Sep. 1968, p. 398.

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