Optically immersed semiconductor photodetectors

Details Optically immersed semiconductor photodetectors Optically immersed semiconductor photodetectors

1994-06-28

1996-08-13

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

2503381, 250353, G01J 508

Patent

active

055458963

ABSTRACT:
Optical immersion of a semiconductor photodetector to a plano-convex lens is obtained with a spring arranged to urge the photodetector to abut the lens. To facilitate alignment of the detector and the lens, the spring defines, in one embodiment, a convex surface to abut a substrate that carries the detector. In another embodiment, alignment is facilitated by a ball positioned between the spring and the substrate. Optical noise is reduced by a dielectric between the detector and the lens, with the dielectric thickness less than 1/10 of any radiation wavelength of interest.

REFERENCES:
patent: 2964636 (1960-12-01), Cary
patent: 2994053 (1961-07-01), De Waard
patent: 4425504 (1984-01-01), Turnbull et al.
patent: 4629892 (1986-12-01), Carmichael et al.
R. Clark Jones, "Immersed Radiation Detectors", Applied Optics, vol. 1, No. 5, Sep. 1962.
Slawek, Joseph E. Jr., et al, "Letter to the Editor", Infrared Physics, vol. 15, 1975, pp. 339-340.

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