Optically driven semiconductor device

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357 19, 357 41, H01L 2714

Patent

active

051443953

ABSTRACT:
An optically driven semiconductor device is disclosed which comprises a semiconductor substrate, a plurality of vertical field effect transistors formed on the substrate, and a plurality of optoelectric transducers formed on an insulating film above the respective transistors, wherein the transistors have the substrate in common as a drain. Also disclosed is an optically driven semiconductor device which comprises a semiconductor substrate, a vertical field effect transistor formed on the substrate and a solar cell formed on an insulating film above the substrate, wherein the solar cell is formed with a polycrystalline silicon layer or monocrystalline silicon layer grown by the chemical vapor deposition method. Moreover, there are disclosed optically coupled semiconductor relay devices using these optically driven semiconductor devices.

REFERENCES:
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patent: 4931656 (1990-06-01), Ehalt et al.
Koi et al., "SOI Photodiode . . . Switching", IEEE, Dec. 1987.
Patent Abstracts of Japan, vol. 11, No. 314 (Oct. 13, 1987) 62-106660.
French Patent Publication No. 2,590,750, La Telemecanique Electrique (Nov. 22, 1985).
Patent Abstracts of Japan, vol. 11, No. 341, (Nov. 7, 1987) 62-122180.
Proceedings of the IEDM-International Electron Devices Meeting, Washington, D.C., Dec. 6-9, 1987, 18.7 "SOI Photodiode Array Stacked on VDMOS For Optical Switching" by Kazumasa Kioi et al.
Patent Abstracts of Japan, vol. 11, No. 95 (E-492) (2542), Mar. 25, 1987.

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