Optically coupled linear bilateral transistor

Details Optically coupled linear bilateral transistor Optically coupled linear bilateral transistor

1977-11-18

1979-07-03

Edlow, Martin H.

357 30, 357 61, 357 19, H01L 29161

Patent

active

041602587

ABSTRACT:
A symmetric double heterojunction transistor consisting of a lightly doped wide bandgap--heavily doped narrow bandgap--lightly doped wide bandgap structure with the wide bandgap materials having a conductivity type opposite to that of the narrow bandgap material is optically accessed, symmetric with respect to the polarity of applied bias across the transistor and has linear current-voltage characteristics through the origin. A preferred embodiment uses a nGa.sub.1-x Al.sub.x As-pGaAs-nGa.sub.1-x Al.sub.x As structure.

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Konogai, et al., Journal of Appl. Phys., vol. 46, No. 5, May 1975.
Alferov, Sov. Phys. Semicond., vol. 7, No. 6, Dec. 1973, pp. 780 et seq.
Beneking, Electronics Letters, 12, Aug. 5, 1976, pp. 395 et seq.
Journal of Applied Physics 46, May 1975, pp. 2120 et seq.

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