Optically controlled surface-emitting lasers

Details Optically controlled surface-emitting lasers Optically controlled surface-emitting lasers

1991-05-09

1992-07-21

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, 357 19, H01S 319

Patent

active

051329824

ABSTRACT:
An optically controlled vertical-cavity, surface-emitting laser comprising a heterojunction, bipolar photo-transistor epitaxially grown on a substrate and a vertical-cavity, surface-emitting laser epitaxially grown on the photo-transistor. Two electrodes set up a single current path through the laser and photo-transistor. A controlling optical beam selectively illuminates the photo-transistor to turn it on, open the current path through the laser, and causing the laser to emit light. Dependent upon the electrical biasing conditions, the combination device can be used as an optical amplifier or can be made to optically latch. Further, it can be biased to operate as an AND or OR gate.

REFERENCES:
patent: 4833511 (1989-05-01), Sugimoto
patent: 4949350 (1990-08-01), Jewell
J. Katz et al, "A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser," Applied Physics Letters, Jul. 1980, vol. 37(2), pp. 211-213.
N. Bar-Chaim et al, "Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor," Applied Physics Letters, Apr. 1982, vol. 40, pp. 556-557.
W. K. Chan et al, "Optically Controlled Surface Emitting Lasers," Technical Digest International Electron Devices Meeting Proceedings, Dec. 1990, pp. 6.9.1-6.9.3.
G. R. Olbright et al, "Cascadable laser logic devices: Discrete integration of phototransistors with surface-emitting laser diodes," Electronics Letters, Jan. 1991, vol. 27, pp. 216-217.
T. Numai et al, "Surface-emitting laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity," Applied Physics Letters, Mar. 1991, vol. 58, pp. 1250-1252.

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