Optically controlled microwave switch and signal switching syste

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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Details

250551, 250214R, H01J 4014

Patent

active

052142752

ABSTRACT:
Disclosed is an optically activated microwave switch (10) which includes a field-effect transistor (12) that is switched between conducting and nonconducting states by a photodiode (14) that is connected between the field-effect transistor gate and drain electrode and a photodiode (16) that is connected between the field-effect transistor gate and source electrode. The circuit is configured and arranged for switching unbiased sinusoidal microwave signals of a frequency as high as approximately 10 gigahertz. A cascade arrangement of switches (10) provides increased signal handling capability in situations in which a single switch cannot be employed. Monolithic integrated circuit realizations of both single stage and cascaded stage arrangements are disclosed in which the semiconductor substrate is GaAs, the field-effect transistors are metal-semiconductor field-effect transistors and the photodiodes are interdigitated metal-semiconductor-metal devices.

REFERENCES:
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patent: 4303831 (1981-12-01), El Hamamsy
patent: 4419586 (1983-12-01), Phipps
patent: 4636646 (1987-01-01), Hartman et al.
patent: 4782223 (1988-11-01), Suzuki
patent: 5073718 (1991-12-01), Paolella
S. J. Wojtczuk et al., "Comparative Study of Easily Integrable Photodetectors," Journal of Lightwave Technology LT-5:1365-1370 (1987).
Sugeta et al., Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits, Proceedings of the 11th Conference (1979 International) on Solid State Devices, Tokyo, 1979; Japanese Journal of Applied Physics, vol. 19, Supp. 19-1, pp. 459-464 (1980).
Frequency and Pulse Response of a Novel High Speed Interdigital Surface Photoconductor (IDPC), IEEE Electron Device Letters, vol. Edl-2, No. 5, pp. 112-114 (May 1981).

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