Optically bistable semiconductor device with pairs of monoatomic

Details Optically bistable semiconductor device with pairs of monoatomic Optically bistable semiconductor device with pairs of monoatomic

1991-06-27

1993-06-01

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

257 12, 257 20, 257192, 257280, 257464, 257592, 257593, 257604, 257656, 359243, H01L 2902, G02F 302

Patent

active

052162605

ABSTRACT:
An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the substrate. Each Dirac-delta doped monoatomic layer is separated from the next adjacent Dirac-delta doped monoatomic layer by a layer of pure, undoped intrinsic semiconductor material such as gallium arsenide.

REFERENCES:
patent: 3621466 (1971-11-01), Misawa
patent: 3882533 (1975-05-01), Dohler
patent: 4083062 (1978-04-01), Ohuchi et al.
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4208667 (1980-06-01), Chang et al.
patent: 4410902 (1983-10-01), Malik
patent: 4591889 (1986-05-01), Gossard et al.
patent: 4597638 (1986-07-01), Chemla et al.
patent: 4716449 (1987-12-01), Miller
patent: 4795241 (1989-01-01), Komatsu et al.
patent: 4833508 (1989-05-01), Ishikawa
patent: 4882609 (1989-11-01), Schubert et al.
C. E. C. Wood et al., Complex Free-Carrier Profile Synthesis by "Atomic Pe" doping of MBE GaAs, pp. 383-387, J. Appl. Phys. 51(1), Jan. 1980.
C. E. C. Wood et al., Hyper-Thin Channel M.B.E. GaAs Power F.E.T.'s by Single Atomic Plane Doping, p. 16-3, International Electronic Devices Meeting, 1979.
Arnold et al., High Performance Inverted and Large Current Double Interface Modulation-Doped Field-Effect Transistors With the Bulk (Al, Ga) As Replaced by Superlattice at the Inverted Interface, pp. 902-904, Appl. Phys. Lett., vol. 45, No. 8, Oct. 15, 1984.
K. Yamaguchi et al., A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET), pp. 267-270, 2419 Japanese Journal of Applied Physics. Supplements vol. 22 (1983).
R. J. Malik et al., Planar-Doped Barriers in GaAs by Molecular Beam Epitaxy, pp. 836-838, Electronics Letters, Oct. 23, 1980, vol. 16, No. 2.
R. J. Malik et al., GaAs Planar-Doped Barrier Transistors Grown by Molecular Beam Epitaxy, pp. 87-96, Zie Voor Titel Boek, de 2e Pagina.
F. Capasso, Band-Gap Engineering Via Graded Gap, Superlattice, and Periodic Doping Structures: Applications to Novel Photodetectors and Other Devices, pp. 457-461, J. Vac. Sci. Technol. B1(2), Apr.-Jun. 1983.
D. A. B. Miller, Novel Hybrid Optically Bistable Switch: The Quantum Well Self-Electro-Optic Effect Device, pp. 13-15, Appl. Phys. Lett 45(1), Jul. 1984.
S. Tiwari et al., Compensating Charge Layers in High Electron Mobility Transistors IBM Technical Disclosure Bulletin, vol. 27, No. 9, Feb. 1985.

Affiliated with

Also associated with

Rating

Optically bistable semiconductor device with pairs of monoatomic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optically bistable semiconductor device with pairs of monoatomic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optically bistable semiconductor device with pairs of monoatomic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1816705