Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-02-27
1997-06-10
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 25, 257184, 257656, 359245, 359248, H01L 2906, H01L 310328
Patent
active
056378831
ABSTRACT:
An optically addressed spatial light modulator includes top and bottom conductive layers sandwiching an intrinsic semiconductor multilayer structure. A cladding layer having a high trapping density is sandwiched between at least one of the electrodes and the intrinsic semiconductor layer structure. Typically, one cladding layer will be sandwiched between the top conductive layer and the intrinsic semiconductor multilayer structure and another cladding layer will be sandwiched between the bottom conductive layer and the intrinsic semiconductor structure. The cladding layer or layers laterally confine the photocarriers generated within the intrinsic semiconductor multilayer structure.
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Bowman Steven R.
Dietrich Harry B.
Katzer Douglas S.
Rabinovich William S.
Edelberg Barry A.
McDonnell Thomas E.
The United States of America as represented by the Secretary of
Tran Minh-Loan
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