Optically addressed extreme ultraviolet modulator and...

Optical: systems and elements – Optical modulator – Light wave directional modulation

Reexamination Certificate

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C359S254000, C359S259000, C359S316000, C359S290000, C359S291000, C250S492200

Reexamination Certificate

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07079306

ABSTRACT:
An optically addressed extreme ultraviolet (EUV) modulator in which a spatial amplitude or phase pattern is provided to an EUV beam that is reflected from, or transmitted through the modulator. The modulator includes a modulator structure that includes a material with a high coefficient of thermal expansion. When a thermal impulse is incident on one part of the modulator, the resulting expansion changes the reflected phase or amplitude of the EUV beam from that part. A thermal pattern is imprinted on the modulator by absorption of a visible or ultraviolet pattern, resulting in a corresponding modulation of the EUV beam. A lithography system is based on the optically addressed EUV modulator.

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Oldham et al., “Mirror-Based Pattern Generation For Maskless Lithography”, EECS Department, University of California, Berkeley, CA 94720, private communication, Dec. 2003.
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Search Report dated Apr. 11, 2005 from corresponding International Application No. PCT/US2004/027049.

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