Optically activated wafer-scale pulser with AlGaAs epitaxial lay

Details Optically activated wafer-scale pulser with AlGaAs epitaxial lay Optically activated wafer-scale pulser with AlGaAs epitaxial lay

1992-01-24

1993-11-16

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

257 79, 257 94, 257 98, 2502141, H01L 3300, H01J 4014

Patent

active

052626571

ABSTRACT:
A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.

REFERENCES:
patent: 5060028 (1991-10-01), Kuo et al.
patent: 5061974 (1991-10-01), Onodera et al.
patent: 5146075 (1992-09-01), Kim et al.
A. Kim et al., "Monolithic, photoconductive impulse generator using a GaAs afer", Applied Physics Letters 58(24), Jun. 17, 1991.

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