Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent
1992-01-24
1993-11-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
257 79, 257 94, 257 98, 2502141, H01L 3300, H01J 4014
Patent
active
052626571
ABSTRACT:
A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.
REFERENCES:
patent: 5060028 (1991-10-01), Kuo et al.
patent: 5061974 (1991-10-01), Onodera et al.
patent: 5146075 (1992-09-01), Kim et al.
A. Kim et al., "Monolithic, photoconductive impulse generator using a GaAs afer", Applied Physics Letters 58(24), Jun. 17, 1991.
Jasper, Jr. Louis J.
Kim Anderson H.
Weiner Maurice
Youmans Robert J.
Zeto Robert J.
Anderson William H.
Jackson Jerome
Martin Valencia M.
The United States of America as represented by the Secretary of
Zelenka Michael
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